2SA1386A Bipolar Transistor

Characteristics of 2SA1386A Transistor

  • Type: PNP
  • Collector-Emitter Voltage, max: -180 V
  • Collector-Base Voltage, max: -180 V
  • Emitter-Base Voltage, max: -4 V
  • Collector Current − Continuous, max: -15 A
  • Collector Dissipation: 130 W
  • DC Current Gain (hfe): 50 to 180
  • Transition Frequency, min: 40 MHz
  • Operating and Storage Junction Temperature Range: -55 to +150 °C
  • Package: TO-3P

Pinout of 2SA1386A

Here is an image showing the pin diagram of this transistor.

Classification of hFE

The 2SA1386A transistor can have a current gain of 50 to 180. The gain of the 2SA1386A will be in the range from 50 to 180, for the 2SA1386A-O it will be in the range from 50 to 180, for the 2SA1386A-P it will be in the range from 50 to 180, for the 2SA1386A-Y it will be in the range from 50 to 180.

Marking

Sometimes the "2S" prefix is not marked on the package - the 2SA1386A might only be marked "A1386A".

Complementary NPN transistor

The complementary NPN transistor to the 2SA1386A is the 2SC3519A.

Replacement and Equivalent for 2SA1386A transistor

You can replace the 2SA1386A with the 2SA1492, 2SA2151, 2SA2151A, 2SA2151A-O, 2SA2151A-P, 2SA2151A-Y, MJW1302A or MJW1302AG.
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